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WFF4N60

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Product Manufacturers Pack D/C
WFF4N60 - 2007 TO-220

General Description

This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)

Maximum Ratings

Symbol Characteristics Rating Units
VDSS Drain to Source Voltage 600 V
ID Continuous Drain Current(@TC = 25°C) 4.0* A
Continuous Drain Current(@TC = 100°C) 2.5* A
IDM

VGS

EAS

EAR

dv/dt
Drain Current Pulsed (Note 1)

Gate to Source Voltage

Single Pulsed Avalanche Energy (Note 2)

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)
16*

±30

240

10

4.5
A

V

mJ

mJ

V/ns
PD Maximum Power Dissipation @Tc = 25°C 230 W
Maximum Power Dissipation @Tc = 100°C 90 W
Tsc Short Circuit Withstand Time 10 uS
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C
TL Maximum Lead Temp. For Soldering
Purposes, 1/8" from case for 5 seconds
300 °C

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PDF / Datasheet

WFF4N60 PDF Download

WFF4N60

File Size: 769632 KB
Manufacturer: Wisdom technologies Int`l

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